BUK456 DATASHEET PDF

BUKB Transistor Datasheet, BUKB Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. BUK datasheet, BUK circuit, BUK data sheet: PHILIPS – PowerMOS transistor,alldatasheet, datasheet, Datasheet search site for Electronic. Buy Transistor, MOSFET, BUKA BUKA. Browse our latest miscellaneous Technical Reference. BUKA/B Power MOSFET Data Sheet.

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Typical reverse diode current. Normalised drain-source on-state resistance. Stress above one or more of the limiting values may cause permanent damage to the device. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

STP60NE06/BUK N-channel FET – Soanar

The information presented in this document does not form part of any quotation fatasheet contract, it is believed to be accurate and reliable and may be changed without notice. Typical capacitances, Ciss, Coss, Crss.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Stress above one or more of the limiting values may cause permanent damage to the device. Typical turn-on gate-charge characteristics.

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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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The information presented datashset this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

No liability will be accepted by the publisher for any consequence of its use.

Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Normalised continuous drain current.

Application information Where application information is given, it is advisory and does not form part of the specification. TOAB; pin datasheft connected to mounting base. April 6 Rev 1. UNIT – – 1. Typical reverse diode current.

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Exposure to limiting values for extended periods may affect device reliability. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Product specification This data sheet contains final product specifications. April 7 Rev 1. UNIT – – 1. Normalised continuous drain current. No liability will be accepted by the publisher for any consequence of its use.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Typical turn-on gate-charge characteristics. Refer to mounting instructions for TO envelopes. Publication thereof does not convey nor imply any license under patent or other industrial or datashret property rights.

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Typical capacitances, Ciss, Coss, Crss. Exposure to limiting values for extended periods may affect device reliability. Normalised drain-source on-state resistance.

Application information Where application information is given, it is advisory and does not form part of datashet specification. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such datashwet use or sale.

May 7 Rev 1.

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Product specification This data sheet contains final product specifications.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. May 6 Rev 1.

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